Print Email Facebook Twitter Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing Title Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing Author Fujii, M. Ishikawa, Y. Ishihara, R. Van der Cingel, J. Mofrad, M.R.T. Horita, M. Uraoka, Y. Faculty Electrical Engineering, Mathematics and Computer Science Department Delft Institute of Microsystems and Nanoelectronics Date 2013-03-26 Abstract In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C according to thermal calculation. Our analysis revealed that high-energy irradiation in ELA produced a mixed phase of InZnO and SiO2, leading to the deterioration of TFT characteristics. Subject indium compoundslaser beam annealinglaser beam effectssemiconductor materialssemiconductor thin filmsthin film transistorszinc compounds To reference this document use: http://resolver.tudelft.nl/uuid:03dcb563-3b0e-44f2-8c06-975606cd4326 DOI https://doi.org/10.1063/1.4798519 Publisher American Institute of Physics ISSN 0003-6951 Source https://doi.org/10.1063/1.4798519 Source Applied Physics Letters, 102 (12), 2013 Part of collection Institutional Repository Document type journal article Rights © 2013 American Institute of Physics Files PDF vanderCingel_2013.pdf 446.86 KB Close viewer /islandora/object/uuid:03dcb563-3b0e-44f2-8c06-975606cd4326/datastream/OBJ/view