Print Email Facebook Twitter Single Dopant Implantation into a Nanoscale MOSFET Devices Title Single Dopant Implantation into a Nanoscale MOSFET Devices Author Johnson, B.C. Alves, A. Van Donkelaar, J. Thompson, S. Yang, C. Jamieson, D. Verduijn, A. Mol, J. Tettamanzi, G. Rogge, S. Wacquez, R. Vinet, M. Dzurak, A. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2010-10-10 To reference this document use: http://resolver.tudelft.nl/uuid:0419f542-95dc-454f-b546-d06c173dbe30 Publisher The Electrochemical Society ISSN 1091-8213 Source Meeting Abstracts - Electrochemical Society, 218th ECS Meeting, Las Vegas, NV, USA, 10-15 October 2010: High Purity Silicon 11 Part of collection Institutional Repository Document type journal article Rights © 2010 The Author(s)The Electrochemical Society Files PDF Verduijn_2010.pdf 73.86 KB Close viewer /islandora/object/uuid:0419f542-95dc-454f-b546-d06c173dbe30/datastream/OBJ/view