Print Email Facebook Twitter Simulation and Fabrication of a-IGZO Flexible vertical TFTs Title Simulation and Fabrication of a-IGZO Flexible vertical TFTs Author Aguirre, D.P. Contributor French, P.J. (mentor) Petti, L. (mentor) Faculty Mechanical, Maritime and Materials Engineering Department Biomedical Engineering Programme Bio Instrumentation Date 2013-09-30 Abstract The aim of this thesis is to design, simulate, fabricate and characterize Flexible Vertical Thin Film Transistor (TFT). Flexible Vertical Thin Film Transistors would allow to develop the next generation of high speed flexible circuits, due to their small channel length. Despite of this, to the date, no Flexible Vertical TFTs with an Amorphous Indium Gallium Zinc Oxide (a-IGZO) channel have been fabricated. For this reason, the development and design of a flexible Vertical TFT with good electrical characteristics represents the initial step for further development of high frequency flexible electronics Subject vertical flexible thin film transistors To reference this document use: http://resolver.tudelft.nl/uuid:074964fa-e4aa-49a3-a74e-7c6c2fd5222b Embargo date 2013-09-25 Part of collection Student theses Document type master thesis Rights (c) 2013 Aguirre, D.P. Files PDF MasterThesisDPAguirre.pdf 25.82 MB Close viewer /islandora/object/uuid:074964fa-e4aa-49a3-a74e-7c6c2fd5222b/datastream/OBJ/view