Print Email Facebook Twitter Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation Title Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation Author Johnson, B.C. Tettamanzi, G.C. Alves, A.D.C. Thompson, S. Yang, C. Verduijn, J. Mol, J.A. Wacquez, R. Vinet, M. Sanquer, M. Rogge, S. Jamieson, D.N. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2010-06-30 Abstract We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500 keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14 keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current. Subject elemental semiconductorsion beam effectsMOSFETsilicon To reference this document use: http://resolver.tudelft.nl/uuid:0a7f1ec4-ae9e-4190-ab93-261fca830a06 DOI https://doi.org/10.1063/1.3458783 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v96/i26/p264102/s1 Source Applied Physics Letters, 97 (26), 2010 Part of collection Institutional Repository Document type journal article Rights (c) 2010 The Author(s); American Institute of Physics Files PDF Tettamanzi_2010.pdf 634.39 KB Close viewer /islandora/object/uuid:0a7f1ec4-ae9e-4190-ab93-261fca830a06/datastream/OBJ/view