Print Email Facebook Twitter The hole picture as alternative for the common electron picture to describe hole trapping and luminescence quenching Title The hole picture as alternative for the common electron picture to describe hole trapping and luminescence quenching Author Dorenbos, P. (TU Delft RST/Fundamental Aspects of Materials and Energy) Date 2018 Abstract Electronic level schemes with the host valence and conduction band together with the level locations of ground and excited states of defects are used to explain and predict luminescence and carrier trapping phenomena. These schemes are always constructed and interpreted by using the electron picture. In this work the alternative hole picture is presented. Such picture is sometimes used in the field of semi-conductors but hardly ever in the field of wide band gap inorganic compounds. We will focus on the lanthanides, and first show where to draw the hole ground state and excited hole states in our scheme. It leads to up-side-down Dieke diagrams and up-side-down configuration coordinate diagrams but for the rest everything is equivalent to the electron picture. With the hole picture, luminescence quenching via hole ionization to the valence band and hole trapping in defects can be illustrated much more conveniently than with the electron picture. As examples the quenching of the Tb3+ D45 emissions by electron ionization and the quenching of the Eu3+ D05 emissions by hole ionization are compared. To reference this document use: http://resolver.tudelft.nl/uuid:0c159619-c61f-4181-8e19-add5ae5ae7b6 DOI https://doi.org/10.1016/j.jlumin.2018.01.013 Embargo date 2020-01-30 ISSN 0022-2313 Source Journal of Luminescence, 197, 62-65 Bibliographical note Accepted Author Manuscript Part of collection Institutional Repository Document type journal article Rights © 2018 P. Dorenbos Files PDF accepted_author_manuscript.pdf 878.18 KB Close viewer /islandora/object/uuid:0c159619-c61f-4181-8e19-add5ae5ae7b6/datastream/OBJ/view