4T CMOS Active Pixel Sensors under Ionizing Radiation

4T CMOS Active Pixel Sensors under Ionizing Radiation

Tan, J.

Theuwissen, A. (promotor)

Electrical Engineering, Mathematics and Computer Science

Microelectronics & Computer Engineering

2013-04-15

This thesis investigates the ionizing radiation effects on 4T pixels and the elementary in-pixel test devices with regard to the electrical performance and the optical performance. In addition to an analysis of the macroscopic pixel parameter degradation, the radiation-induced degradation mechanisms are also presented from the microscopic perspective in terms of activation energy, the Meyer-Neldel relationship, and the trap capture cross section. In order to strengthen the radiation tolerance of 4T CMOS image sensors, some radiation-hardening-by-design techniques are proposed based on the understanding of the preceding study on the radiation effects. The effectiveness of the radiation-hardened techniques is also verified by being compared to a reference pixel array without radiation protection techniques.

4T Pixel
CMOS Image Sensor
Radiation-Hardening-by-Design
Dark Signal
Degradation Mechanism

https://doi.org/10.4233/uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f

2013-04-17

9789461916846

Institutional Repository

doctoral thesis

(c) 2013 Tan, J.