Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

Title

Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

 Author

Island, J.O. (TU Delft QN/van der Zant Lab; Kavli institute of nanoscience Delft)
Steele, G.A. (TU Delft QN/Steele Lab; Kavli institute of nanoscience Delft) ORCID 0000-0003-1032-6226
van der Zant, H.S.J. (TU Delft QN/van der Zant Lab; Kavli institute of nanoscience Delft) ORCID 0000-0002-5385-0282
Castellanos Gomez, A. (Instituto Madrilenõ de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia))

Date

2016-07-01

 Abstract

Wereport on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2)-molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 μA) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe.Weanticipate that this device architecture could be easily extended to other 2D materials.


 Subject

Andreev reflection
Josephson junction
Molybdenum disulfide
MoS
Thickness dependence
Tunnel barrier
Vertical junction

 To reference this document use:

http://resolver.tudelft.nl/uuid:139abb26-24c3-4a84-9398-ed9e3e31251c

 DOI

https://doi.org/10.1088/2053-1583/3/3/031002

 Embargo date

2017-07-01

 ISSN

2053-1583

 Source

2D Materials, 3 (3), 1-7

 Bibliographical note

Accepted Author Manuscript

 Part of collection

Institutional Repository

 Document type

journal article

 Rights

© 2016 J.O. Island, G.A. Steele, H.S.J. van der Zant, A. Castellanos Gomez
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