Print Email Facebook Twitter A CMOS-Compatible Hybrid Plasmonic Slot Waveguide With Enhanced Field Confinement Title A CMOS-Compatible Hybrid Plasmonic Slot Waveguide With Enhanced Field Confinement Author Xiao, Jing (Guilin University of Electronic Technology) Wei, Qi-Qin (Guilin University of Electronic Technology) Yang, Daoguo (Guilin University of Electronic Technology) Zhang, Ping (Guilin University of Electronic Technology) He, Ning (Guilin University of Electronic Technology) Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials) Ren, Tian-Ling (Tsinghua University) Chen, Xian-Ping (Guilin University of Electronic Technology) Date 2016 Abstract The emerging field of nanophotonics requires plasmonic devices to be fully compatible with semiconductor fabrication techniques. However, very few feasible practical structures exist at present. Here, we propose a CMOS-compatible hybrid plasmonic slot waveguide (HPSW) with enhanced field confinement. Our simulation results show that the HPSW exhibits significantly enhanced field confinement as compared with the traditional low-index slot waveguides and the hybrid metal dielectric slot waveguides. By controlling the thicknesses of different layers, an optimized HPSW structure with a better tradeoff between field confinement and propagation length has been simultaneously achieved. Subject multi-layer structureHybrid plasmonic slot waveguidefield confinement To reference this document use: http://resolver.tudelft.nl/uuid:146873eb-8579-4df7-b3f8-6d550973b83b DOI https://doi.org/10.1109/LED.2016.2531990 ISSN 0741-3106 Source IEEE Electron Device Letters, 37 (4), 456-458 Part of collection Institutional Repository Document type journal article Rights © 2016 Jing Xiao, Qi-Qin Wei, Daoguo Yang, Ping Zhang, Ning He, Kouchi Zhang, Tian-Ling Ren, Xian-Ping Chen Files PDF 11575955.pdf 848.54 KB Close viewer /islandora/object/uuid:146873eb-8579-4df7-b3f8-6d550973b83b/datastream/OBJ/view