Print Email Facebook Twitter Large-area selective CVD epitaxial growth of Ge on Si substrates Title Large-area selective CVD epitaxial growth of Ge on Si substrates Author Sammak, A. De Boer, W. Nanver, L.K. Faculty Electrical Engineering, Mathematics and Computer Science Department DIMES Date 2011-11-14 Abstract Selective epitaxial growth of crystalline Ge on Si in a standard ASM Epsilon 2000 CVD reactor is investigated for the fabrication of Ge p+n diodes. At the deposition temperature of 700?C, most of the lattice mismatch-defects are trapped within first 300nm of Ge growth and good quality single crystal Ge is achieved within a layer thickness of approximately 1 ?m on window sizes up to hundreds of ?m2. For p+n junction fabrication, a sequence of pure-Ga and then pure-B depositions are utilized for the ultrashallow p-doping of As-doped Ge-islands. The I-V characterization of the diodes confirms the good quality of the Ge and ideality factors of ~ 1.1 with low saturation currents are reliably achieved Subject chemical vapor deposition, Ge, Si, epitaxy To reference this document use: http://resolver.tudelft.nl/uuid:16c9a987-b3dc-476c-b1e1-39090f090d46 Publisher Technology Foundation STW Source Proceedings ICT.OPEN2011: Micro Technology and Micro Devices (SAFE 2011), Nov. 14-15, Veldhoven, 2011, 1-4 Part of collection Institutional Repository Document type conference paper Rights (c) 2011 Sammak, A., De Boer, W., Nanver, L.K. Files PDF 273934.pdf 411.1 KB Close viewer /islandora/object/uuid:16c9a987-b3dc-476c-b1e1-39090f090d46/datastream/OBJ/view