High Current Density Electrical Breakdown of TiS₃ Nanoribbon-Based Field-Effect Transistors

High Current Density Electrical Breakdown of TiS₃ Nanoribbon-Based Field-Effect Transistors

Molina-Mendoza, Aday J. (Universidad Autónoma de Madrid)
Island, J.O. (TU Delft QN/van der Zant Lab; Kavli institute of nanoscience Delft)
Paz, Wendel S. (Universidad Autónoma de Madrid)
Clamagirand, Jose Manuel (Universidad Autónoma de Madrid)
Ares, Jose Ramón (Universidad Autónoma de Madrid)
Flores, Eduardo (Universidad Autónoma de Madrid)
Leardini, Fabrice (Universidad Autónoma de Madrid)
Sánchez, Carlos (Universidad Autónoma de Madrid; Instituto de Ciencia de Materiales de Madrid (ICMM))
Agraït, Nicolás (Universidad Autónoma de Madrid; Instituto Madrilenõ de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia))
Rubio-Bollinger, Gabino (Universidad Autónoma de Madrid)
van der Zant, H.S.J. (TU Delft QN/van der Zant Lab; Kavli institute of nanoscience Delft)
Ferrer, Isabel J. (Universidad Autónoma de Madrid; Instituto de Ciencia de Materiales de Madrid (ICMM))
Palacios, JJ (Universidad Autónoma de Madrid)
Castellanos-Gomez, Andres (Instituto Madrilenõ de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia))

2017-04-05

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density properties of the layered material titanium trisulfide (TiS₃) are studied here. The high breakdown current densities of up to 1.7 × 10⁶ A cm⁻² are observed in TiS₃ nanoribbon-based field-effect transistors, which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, a thermogravimetric analysis of bulk TiS₃ is performed and the results with density functional theory and kinetic Monte Carlo calculations are compared. In conclusion, the oxidation of TiS₃ and subsequent desorption of sulfur atoms play an important role in the electrical breakdown of the material in ambient conditions. The results show that TiS₃ is an attractive material for high power applications and lend insight into the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices.

2D materials
field-effect transistors
high current density
thermal stability
titanium trisulfide
transition metal trichalcogenides

http://resolver.tudelft.nl/uuid:172b1382-61a9-4c99-9ea7-14b22e50ec33

https://doi.org/10.1002/adfm.201605647

2018-02-15

1616-301X

Advanced Functional Materials, 27 (13)

Accepted Author Manuscript

Institutional Repository

journal article

© 2017 Aday J. Molina-Mendoza, J.O. Island, Wendel S. Paz, Jose Manuel Clamagirand, Jose Ramón Ares, Eduardo Flores, Fabrice Leardini, Carlos Sánchez, Nicolás Agraït, Gabino Rubio-Bollinger, H.S.J. van der Zant, Isabel J. Ferrer, JJ Palacios, Andres Castellanos-Gomez