Determination of resist parameters using the extended Nijboer-Zernike theory

Determination of resist parameters using the extended Nijboer-Zernike theory

Dirksen, P.
Braat, J.
Janssen, A.J.E.M.
Leeuwestein, A.
Kwinten, H.
Van Steenwinckel, D.

Applied Sciences

Imaging Science and Technology

2004-05-28

This study presents an experimental method to determine the resist parameters that are at the origin of a general blurring of the projected aerial image. The resist model includes the effects of diffusion in the horizontal plane and a second cause for image blur that originates from a stochastic variation of the focus parameter. The used mathematical framework is the so-called Extended Nijboer-Zernike (ENZ) theory. The experimental procedure to extract the model parameters is demonstrated for several 193 nm resists under various conditions of post exposure baking temperature and baking time. The advantage of our approach is a clear separation between the optical parameters, such as feature size, projection lens aberrations and the illuminator setting on the one hand and process parameters introducing blur on the other.

optical lithography
resist
diffusion constant
focus noise
point-spread function
Extended Nijboer-Zernike theory

http://resolver.tudelft.nl/uuid:1fb9172a-4c3a-4e4f-9359-db151ee0c8bd

SPIE

0277-786X

Proceedings of SPIE, 2004 vol. 5377

Institutional Repository

conference paper

(c)2004 Dirksen, P., Braat, J., Janssen, A.J.E.M., Leeuwestein, A., Kwinten, H., Van Steenwinckel, D.