Print Email Facebook Twitter Pattern transfer into silicon using sub-10 nm masks made by electron beam induced deposition Title Pattern transfer into silicon using sub-10 nm masks made by electron beam induced deposition Author Scotuzzi, M. Kamerbeek, M.J. Goodyear, A. Cooke, M. Hagen, C.W. Faculty Applied Sciences Department Imaging Physics Date 2015-12-31 Abstract To demonstrate the possibility of using EBID masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20-40 nm EBID masks, that were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine and boron trichloride can selectively etch silicon when using 20-40 nm masks made by EBID. We observed an enhancement of the height ratio, i.e. the ratio of the height of structures before and after etching, up to a factor of 3.5 when using the chlorine chemistry. To demonstrate the pattern transfer of sub-10 nm structures, further experiments were carried out using 8-20 nm EBID masks in combination with hydrogen bromide, chlorine and fluorine chemistries. Fluorine chemistry provided the best results in terms of surface smoothness and height ratio. In this case, 7.4 nm lines were successfully transferred into silicon, resulting in 14.3 nm wide lines with a height ratio of approximately 5. Subject electron beam induced depositionEBIDnano pattern transfernanofabricationReactive Ion EtchingRIEInductively Coupled PlasmaICPNano Imprint LithographyNIL stamps To reference this document use: http://resolver.tudelft.nl/uuid:23d59081-89ca-4774-b6d3-774a72d7997a Publisher SPIE ISBN 9781628415254 Source Proceedings of SPIE-International Society for Optical Engineering 9423, Alternative Lithographic Technologies VII, San Jose, CA, USA Part of collection Institutional Repository Document type conference paper Rights (c) 2015 SPIE Files PDF 320015.pdf 1.03 MB Close viewer /islandora/object/uuid:23d59081-89ca-4774-b6d3-774a72d7997a/datastream/OBJ/view