Print Email Facebook Twitter Single-electron thermal devices coupled to a mesoscopic gate Title Single-electron thermal devices coupled to a mesoscopic gate Author Sánchez, Rafael (Carlos III University of Madrid) Thierschmann, R. (TU Delft QN/Klapwijk Lab) Molenkamp, Laurens W. (Psychosomatics and Psychotherapy) Date 2017-11-01 Abstract We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify the relevant transitions which define the operation of the system as a thermal transistor or a thermal diode. In the former case, thermal-induced charge fluctuations in the gate dot modify the thermal currents in the conductor with suppressed heat injection, resulting in huge amplification factors and the possible gating with arbitrarily low energy cost. In the latter case, enhanced correlations of the state-selective tunneling transitions redistribute heat flows giving high rectification coefficients and the unexpected cooling of one conductor terminal by heating the other one. We propose quantum dot arrays as a possible way to achieve the extreme tunneling asymmetries required for the different operations. Subject heat currentsquantum dotsingle-electron tunnelingthermal devices To reference this document use: http://resolver.tudelft.nl/uuid:24d3b171-1791-4974-872a-f9870885c2da DOI https://doi.org/10.1088/1367-2630/aa8b94 ISSN 1367-2630 Source New Journal of Physics, 19 (11) Part of collection Institutional Repository Document type journal article Rights © 2017 Rafael Sánchez, R. Thierschmann, Laurens W. Molenkamp Files PDF S_nchez_2017_New_J._Phys. ... 113040.pdf 1.45 MB Close viewer /islandora/object/uuid:24d3b171-1791-4974-872a-f9870885c2da/datastream/OBJ/view