Print Email Facebook Twitter Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures Title Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures Author Pateras, Anastasios (University of Wisconsin-Madison) Park, Joonkyu (University of Wisconsin-Madison) Ahn, Youngjun (University of Wisconsin-Madison) Tilka, Jack A. (University of Wisconsin-Madison) Holt, Martin V. (Argonne National Laboratory) Reichl, Christian (ETH Zürich) Wegscheider, Werner (ETH Zürich) Baart, T.A. (TU Delft QCD/Vandersypen Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Dehollain Lorenzana, J.P. (TU Delft QCD/Vandersypen Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Mukhopadhyay, U. (TU Delft QCD/Vandersypen Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Vandersypen, L.M.K. (TU Delft QCD/Vandersypen Lab; TU Delft QN/Vandersypen Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Evans, Paul G. (University of Wisconsin-Madison) Date 2018-05-09 Abstract Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots. Subject deformation potentialdynamical diffractionGaAs quantum devicespiezoelectric effectstress-induced distortionsX-ray nanobeams To reference this document use: http://resolver.tudelft.nl/uuid:2c3b527c-e40a-466c-9106-296f463c2514 DOI https://doi.org/10.1021/acs.nanolett.7b04603 Embargo date 2018-10-17 ISSN 1530-6984 Source Nano Letters: a journal dedicated to nanoscience and nanotechnology, 18 (5), 2780-2786 Bibliographical note Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. Part of collection Institutional Repository Document type journal article Rights © 2018 Anastasios Pateras, Joonkyu Park, Youngjun Ahn, Jack A. Tilka, Martin V. Holt, Christian Reichl, Werner Wegscheider, T.A. Baart, J.P. Dehollain Lorenzana, U. Mukhopadhyay, L.M.K. Vandersypen, Paul G. Evans Files PDF acs.nanolett.7b04603taverne.pdf 2.13 MB Close viewer /islandora/object/uuid:2c3b527c-e40a-466c-9106-296f463c2514/datastream/OBJ/view