Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

Brauns, Matthias (University of Twente)
Ridderbos, Joost (University of Twente)
Li, Ang (Eindhoven University of Technology)
Van Der Wiel, Wilfred G. (University of Twente)
Bakkers, E.P.A.M. (TU Delft QN/Bakkers Lab; Eindhoven University of Technology)
Zwanenburg, Floris A. (University of Twente)

2016-10-03

We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.

http://resolver.tudelft.nl/uuid:3177399f-eccb-4786-acca-ca3bcf7b2c1b

https://doi.org/10.1063/1.4963715

0003-6951

Applied Physics Letters, 109 (14)

Institutional Repository

journal article

© 2016 Matthias Brauns, Joost Ridderbos, Ang Li, Wilfred G. Van Der Wiel, E.P.A.M. Bakkers, Floris A. Zwanenburg