Print Email Facebook Twitter Single, double, and triple quantum dots in Ge/Si nanowires Title Single, double, and triple quantum dots in Ge/Si nanowires Author Froning, F. N.M. (University of Basel) Rehmann, M. K. (University of Basel) Ridderbos, J. (University of Twente) Brauns, M. (University of Twente) Zwanenburg, F. A. (University of Twente) Li, A. (Eindhoven University of Technology) Bakkers, E.P.A.M. (TU Delft QN/Bakkers Lab; Eindhoven University of Technology) Zumbühl, D. M. (University of Basel) Braakman, F. R. Date 2018-08 Abstract We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices. To reference this document use: http://resolver.tudelft.nl/uuid:37318757-8cce-4de0-9025-3adedd26c492 DOI https://doi.org/10.1063/1.5042501 Embargo date 2019-07-01 ISSN 0003-6951 Source Applied Physics Letters, 113 (7) Part of collection Institutional Repository Document type journal article Rights © 2018 F. N.M. Froning, M. K. Rehmann, J. Ridderbos, M. Brauns, F. A. Zwanenburg, A. Li, E.P.A.M. Bakkers, D. M. Zumbühl, F. R. Braakman Files PDF 1.5042501.pdf 1.55 MB Close viewer /islandora/object/uuid:37318757-8cce-4de0-9025-3adedd26c492/datastream/OBJ/view