Print Email Facebook Twitter Quadruple-Junction Thin-Film Silicon Solar Cells Using Four Different Absorber Materials Title Quadruple-Junction Thin-Film Silicon Solar Cells Using Four Different Absorber Materials Author Si, F.T. (TU Delft Photovoltaic Materials and Devices) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Zeman, M. (TU Delft Electrical Sustainable Energy) Tan, H. (TU Delft Photovoltaic Materials and Devices) Department Electrical Sustainable Energy Date 2017 Abstract We fabricated and studied quadruple-junction wide-gap a-Si:H/narrow-gap a-Si:H/a-SiGex:H/nc-Si:H thin-film silicon solar cells. It is among the first attempts in thin-film photovoltaics to make a two-terminal solar cell with four different absorber materials. Several tunnel recombination junctions were tested, and the n-SiOx:H/p-SiOx:H structure was proven to be a generic solution for the three pairs of neighboring subcells. The proposed combination of absorbers led to a more reasonable spectral utilization than the counterpart containing two nc-Si:H subcells. Besides, the use of high-mobility transparent conductive oxide and modulated surface texture significantly enhances the total light absorption in the absorber layers. This work paved the way toward high-efficiency quadruple-junction cells, and a practical estimation of the achievable efficiency was given. To reference this document use: http://resolver.tudelft.nl/uuid:38b5c23c-a349-4624-b7a3-e6ce98175c84 DOI https://doi.org/10.1002/solr.201700036 ISSN 2367-198X Source Solar RRL, 1 (3-4), 1-6 Part of collection Institutional Repository Document type journal article Rights © 2017 F.T. Si, O. Isabella, M. Zeman, H. Tan Files PDF Si_et_al_2017_Solar_RRL.pdf 1.14 MB Close viewer /islandora/object/uuid:38b5c23c-a349-4624-b7a3-e6ce98175c84/datastream/OBJ/view