Print Email Facebook Twitter The Desigh of a High Dynamic Range CMOS Image Sensor in 110nm Technology Title The Desigh of a High Dynamic Range CMOS Image Sensor in 110nm Technology Author Liu, Y. Contributor Theuwissen, A.J.P. (mentor) Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics & Computer Engineering Programme Electronic Instrumentation Laboraoy Date 2012-08-21 Abstract This thesis presents the design of a dual-transfer-gate high dynamic range CMOS image sensor. Several methods that can be applied to extend the dynamic range have been developed. However, all of these solutions have undesired problems, such as nonlinearity response, higher dark current shot noise and discontinues signal-to-noise ratio. In this thesis, a dual-transfer-gate pixel which can achieve 84.5dB dynamic range is implemented in a 110nm CMOS image sensor technology. The sensor provides 76fps speed in 12-bit digital format. The equivalent input noise is as low as 3.1e- by introducing correlated-double-sampling (CDS) technology. Subject High dynamic rangeImage sensorsRamp geneatoColumn ADCBandgapMultiplexer To reference this document use: http://resolver.tudelft.nl/uuid:3d4832fb-53f3-4997-84b5-5c5d6bd265b9 Embargo date 2012-08-27 Part of collection Student theses Document type master thesis Rights (c) 2012 Liu, Y. Files PDF thesis_Yang_Liu.pdf 3.58 MB Close viewer /islandora/object/uuid:3d4832fb-53f3-4997-84b5-5c5d6bd265b9/datastream/OBJ/view