Print Email Facebook Twitter Growing LaAlO3/SrTiO3 interfaces by sputter deposition Title Growing LaAlO3/SrTiO3 interfaces by sputter deposition Author Dildar, I.M. Neklyudova, M. Xu, Q. Zandbergen, H.W. Harkema, S. Boltje, D. Aarts, J. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2015-06-26 Abstract Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO3 on SrTiO3 substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting. To reference this document use: http://resolver.tudelft.nl/uuid:3e8becb1-6f3c-4e92-baa3-f1b607fe1bae Publisher American Institute of Physics ISSN 2158-3226 Source https://doi.org/10.1063/1.4923285 Source AIP Advances, 5 (6), 2015 Part of collection Institutional Repository Document type journal article Rights (c) 2015 The Author(s)Creative Commons BY Files PDF Neklyudova_2015.pdf 8.31 MB Close viewer /islandora/object/uuid:3e8becb1-6f3c-4e92-baa3-f1b607fe1bae/datastream/OBJ/view