Print Email Facebook Twitter Spin torque transistor revisited Title Spin torque transistor revisited Author Chiba, T. Bauer, G.E.W. Takahashi, S. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2013-05-16 Abstract We theoretically study the operation of a 4-terminal device consisting of two lateral thin-film spin valves that are coupled by a magnetic insulator such as yttrium iron garnet via the spin transfer torque. By magnetoelectronic circuit theory we calculate the current voltage characteristics and find negative differential resistance and differential gain in a large region of parameter space. We demonstrate that functionality is preserved when the control spin valve is replaced by a normal metal film with a large spin Hall angle. Subject field effect transistorsinsulatorsmagnetoelectronicsmetallic thin filmsspin Hall effectspin valvesyttrium compounds To reference this document use: http://resolver.tudelft.nl/uuid:3fd400a1-7423-4696-ab6e-1572f4fb1e08 DOI https://doi.org/10.1063/1.4806982 Publisher American Physical Society ISSN 0003-6951 Source https://doi.org/10.1063/1.4806982 Source Applied Physics Letters, 102 (19), 2013 Part of collection Institutional Repository Document type journal article Rights © 2013 AIP Publishing LLC Files PDF Bauer_2013.pdf 543.51 KB Close viewer /islandora/object/uuid:3fd400a1-7423-4696-ab6e-1572f4fb1e08/datastream/OBJ/view