Print Email Facebook Twitter Single Ion Implantation into Si-Based Devices Title Single Ion Implantation into Si-Based Devices Author Johnson, B.C. Tettamanzi, G.C. Yang, C. Alves, A.D.C. Van Donkelaar, J. Thompson, S. Verduijn, J. Mol, J.A. Wacquez, R. Vinet, M. Dzurak, A.S. Sanquer, M. Rogge, S. Jamieson, D.N. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2010-12-31 Abstract Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of determinisitic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized PiN structures where ions are directed onto a target area around which a field effect transistor can be formed. The second approach involves monitoring the drain current modulation during ion irradiation. We investigate the detection of both high energy He+ and 14 keV P+ dopants. The stopping of these ions is dominated by ionization and nuclear collisions, respectively. The optimization of the implant energy for a particular device and post-implantation processing are also briefly considered. To reference this document use: http://resolver.tudelft.nl/uuid:4132e80e-7817-4393-8a64-80fe737ece77 DOI https://doi.org/10.1149/1.3485692 Publisher The Electrochemical Society ISSN 1938-5862 Source ECS Transactions, 33 (11), 2010 Part of collection Institutional Repository Document type journal article Rights © 2010 The Electrochemical Society Files PDF Tettamanzi_2010.pdf 3.39 MB Close viewer /islandora/object/uuid:4132e80e-7817-4393-8a64-80fe737ece77/datastream/OBJ/view