Wideband Single Pixel Radiometer in CMOS

Wideband Single Pixel Radiometer in CMOS

van Berkel, S.L. (TU Delft Tera-Hertz Sensing)
Malotaux, E.S. (TU Delft Electronics)
Cavallo, D. (TU Delft Tera-Hertz Sensing)
Spirito, M. (TU Delft Electronics)
Neto, A. (TU Delft Tera-Hertz Sensing)
Llombart, Nuria (TU Delft Tera-Hertz Sensing)

2017

The design and performance analysis are presented for a passive uncooled radiometer pixel suitable for integration in 28 nm CMOS technology. In the configuration a single wideband antenna, operating from 200 GHz to 600 GHz, is connected to a pn-junction diode. Including the antenna-detector impedance mismatch, the detector shows an average NEP of 2.71 pW/√Hz such that, together with the antenna, the radiometer promises fully passive and uncooled imaging capabilities with 2.6 K temperature sensitivity at a 10 Hz refresh rate. The design is planned for fabrication and measurement.

CMOS integrated circuits
broadband antennas
millimetre wave antennas
p-n junctions
radiometers
semiconductor diodes
submillimetre wave antennas
submillimetre wave detectors
CMOS technology
antenna-detector impedance mismatch
frequency 10.0 Hz
frequency 200.0 GHz to 600.0 GHz
passive uncooled radiometer pixel
pn-junction diode
size 28.0 nm
temperature 2.6 K
uncooled imaging capabilities
wideband antenna
wideband single pixel radiometer
Antennas
Detectors
Imaging
Lenses
Radiometry
Schottky diodes
Silicon

http://resolver.tudelft.nl/uuid:4851c61f-903b-42d5-a654-3d2c3918d1a5

https://doi.org/10.1109/IRMMW-THz.2017.8067166

IEEE, Danvers, MA

978-1-5090-6048-1

42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017

42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017, 2017-08-27 → 2017-09-01, Cancun, Quintana Roo, Mexico

Accepted Author Manuscript

Institutional Repository

conference paper

© 2017 S.L. van Berkel, E.S. Malotaux, D. Cavallo, M. Spirito, A. Neto, Nuria Llombart