Print Email Facebook Twitter Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si Title Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si Author Zhang, J. Trifunovic, M. Van der Zwan, M. Takagishi, H. Kawajiri, R. Shimoda, T. Beenakker, C.I.M. Ishihara, R. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2013-06-18 Abstract Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350?°C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices have been fabricated, reporting a carrier mobility of 460 cm2/V s and 121 cm2/V s for electrons and holes, respectively. The devices were peeled off and transferred onto a polyethylene naphthalate foil to achieve flexible devices. CMOS inverters were also fabricated and show full output swing. Subject carrier mobilityelemental semiconductorssiliconsubstratesthin film transistors To reference this document use: http://resolver.tudelft.nl/uuid:4b947020-c5e0-4c68-8840-bc5ed498af03 DOI https://doi.org/10.1063/1.4811356 Publisher American Institute of Physics ISSN 0003-6951 Source Applied Physics Letters, 102 (24), 2013 Part of collection Institutional Repository Document type journal article Rights © 2013 AIP Publishing LLC Files PDF Zhang_2013.pdf 1.05 MB Close viewer /islandora/object/uuid:4b947020-c5e0-4c68-8840-bc5ed498af03/datastream/OBJ/view