Print Email Facebook Twitter Determination of in-depth density profiles of multilayer structures Title Determination of in-depth density profiles of multilayer structures Author Kessels, M.J.H. Bijkerk, F. Tichelaar, F.D. Verhoeven, J. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2005-04-20 Abstract We developed and demonstrate an analysis method in which we calibrate the intensity scale of cross-sectional transmission electron microscopy (TEM) using Cu K? reflectometry. This results in quantitative in-depth density profiles of multilayer structures. Only three free parameters are needed to obtain the calibrated profiles, corresponding to three TEM image intensity levels. Additionally, the optical indices of the two multilayer materials used and the assumption that the layers are laterally homogeneous are used in the model. The power and the general usefulness of the method is demonstrated using experimental data of W/Si and Mo/Si multilayer systems with sharp interfaces as well as multilayers of which the interfaces were deliberately intermixed. Subject tungstenmolybdenumsiliconelemental semiconductorsmultilayerstransmission electron microscopyinterface roughnessrefractive indexreflectometry To reference this document use: http://resolver.tudelft.nl/uuid:4b959ad7-4593-4114-ad04-a59be2e24801 DOI https://doi.org/10.1063/1.1882773 Publisher American Institute of Physics ISSN 0021-8979 Source http://link.aip.org/link/JAPIAU/v97/i9/p093513/s1 Source Journal of Applied Physics, 97 (9), 2005 Part of collection Institutional Repository Document type journal article Rights (c) 2005 The Author(s); American Institute of Physics Files PDF Tichelaar_2005.pdf 590.83 KB Close viewer /islandora/object/uuid:4b959ad7-4593-4114-ad04-a59be2e24801/datastream/OBJ/view