Title
Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications
Author
Latkowski, S (Eindhoven University of Technology)
Van Veldhoven, P. J. (Eindhoven University of Technology)
Hänsel, A. (TU Delft ImPhys/Optics)
D'Agostino, D. (Eindhoven University of Technology)
Rabbani-Haghighi, H. (Eindhoven University of Technology)
Docter, B. (EFFECT Photonics B.V.)
Bhattacharya, N. (TU Delft ImPhys/Optics)
Thijs, P. J A (Eindhoven University of Technology)
Ambrosius, H. P M M (Eindhoven University of Technology)
Smit, M (Eindhoven University of Technology)
Williams, KA (Eindhoven University of Technology)
Bente, E.A.J.M. (Eindhoven University of Technology)
Contributor
Garcia-Blanco, Sonia M. (editor)
Nunzi Conti, Gualtiero (editor)
Date
2017
Abstract
In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar, but-joint, active-passive integration on indium phosphide substrate with active components based on strained InGaAs quantum wells. Using this limited set of basic building blocks a novel geometry, widely tunable laser source was designed and fabricated within the first long wavelength multiproject wafer run. The fabricated laser operates around 2027 nm, covers a record tuning range of 31 nm and is successfully employed in absorption measurements of carbon dioxide. These results demonstrate a fully functional long wavelength photonic integrated circuit that operates at these wavelengths. Moreover, the process steps and material system used for the long wavelength technology are almost identical to the ones which are used in the technology process at 1.5μm which makes it straightforward and hassle-free to transfer to the photonic foundries with existing fabrication lines. The changes from the 1550 nm technology and the trade-offs made in the building block design and layer stack will be discussed.
Subject
Gas spectroscopy
Photonic integrated circuits
Semiconductor laser
Tunable laser
To reference this document use:
http://resolver.tudelft.nl/uuid:4fcca547-349e-4095-a3a3-56f7f5b804d6
DOI
https://doi.org/10.1117/12.2256604
Publisher
SPIE
ISBN
978-15-106-0653-1
Source
Integrated Optics: Devices, Materials, and Technologies XXI, 10106
Event
Integrated Optics: Devices, Materials, and Technologies XXI 2017, 2017-01-30 → 2017-02-01, San Francisco, United States
Part of collection
Institutional Repository
Document type
conference paper
Rights
© 2017 S Latkowski, P. J. Van Veldhoven, A. Hänsel, D. D'Agostino, H. Rabbani-Haghighi, B. Docter, N. Bhattacharya, P. J A Thijs, H. P M M Ambrosius, M Smit, KA Williams, E.A.J.M. Bente