Print Email Facebook Twitter Excimer laser crystallization of InGaZnO4 on SiO2 substrate Title Excimer laser crystallization of InGaZnO4 on SiO2 substrate Author Chen, T. Wu, M.Y. Ishihara, R. Nomura, K. Kamiya, T. Hosono, H. Beenakker, C.I.M. Faculty Applied Sciences Department Quantum Nanoscience Date 2011-03-25 Abstract In this paper, we were able to crystallize InGaZnO4 (IGZO) by excimer laser on SiO2 substrate. It was observed that uniform [0001] textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO2 substrate. This process is very promising in fabricating high quality IGZO thin film transistors (TFT) at low temperature without seed substrate. To reference this document use: http://resolver.tudelft.nl/uuid:5768e2be-b2f7-4e51-85c6-e39f74e67620 DOI https://doi.org/10.1007/s10854-011-0347-4 Publisher Springer Verlag ISSN 0957-4522 Source Journal of Materials Science: Materials in Electronics, 22 (11), 2011 Part of collection Institutional Repository Document type journal article Rights (c) 2011 The Author(s). This article is published with open access at Springerlink.com Files PDF chen2011.pdf 309.84 KB Close viewer /islandora/object/uuid:5768e2be-b2f7-4e51-85c6-e39f74e67620/datastream/OBJ/view