Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes

Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes

Sberna, P.M. (TU Delft Tera-Hertz Sensing)
Trifunovic, M. (TU Delft QID/Ishihara Lab; TU Delft QuTech Advanced Research Centre)
Ishihara, R. (TU Delft QID/Ishihara Lab; TU Delft Quantum Integration Technology; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft)

2017-06-11

Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Sibased inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs. The devices, fabricated according to CMOS compatible processes at 350 °C, showed field effect mobilities up to 8 and 2 cm2/(V s) for n- and p-type TFTs, respectively. The presented method combines a low-cost coating technique with the usage of recycled material, opening a route to a convenient and sustainable production of large-area, flexible, and even disposable/single-use electronics.

Disilane byproduct
Byproduct recycle
Polysilane
Low-temperature fabrication
Thin-film transistor
Polycrystalline silicon
Solution processing

http://resolver.tudelft.nl/uuid:57ba5640-0606-4ede-a227-e8b07e0b88f7

https://doi.org/10.1021/acssuschemeng.7b00626

2168-0485

ACS Sustainable Chemistry and Engineering, 5 (7), 5642-5645

Institutional Repository

journal article

© 2017 P.M. Sberna, M. Trifunovic, R. Ishihara