Side Gate Tunable Josephson Junctions at the LaAlO3/SrTiO3 Interface

Title

Side Gate Tunable Josephson Junctions at the LaAlO3/SrTiO3 Interface

 Author

RinconVieiraLugarinhoMonteiro, A.M. (TU Delft QN/Caviglia Lab; Kavli institute of nanoscience Delft)
Groenendijk, D.J. (TU Delft QN/Caviglia Lab; Kavli institute of nanoscience Delft)
Manca, N. (TU Delft QN/Caviglia Lab; Kavli institute of nanoscience Delft)
Mulazimoglu, E. (TU Delft QN/Caviglia Lab; Kavli institute of nanoscience Delft)
Goswami, S. (TU Delft QRD/Kouwenhoven Lab; Kavli institute of nanoscience Delft) ORCID 0000-0002-9095-4363
Blanter, Y.M. (TU Delft QN/Blanter Group; Kavli institute of nanoscience Delft) ORCID 0000-0002-7956-9966
Vandersypen, L.M.K. (TU Delft QN/Vandersypen Lab; Kavli institute of nanoscience Delft) ORCID 0000-0003-4346-7877
Caviglia, A. (TU Delft QN/Caviglia Lab; Kavli institute of nanoscience Delft) ORCID 0000-0001-9650-3371

 Date

2017-02-08

 Abstract

Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO3/SrTiO3 interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.


 Subject

field-effect
Josephson junction
Oxide heterostructures
side gates
SQUID

 To reference this document use:

http://resolver.tudelft.nl/uuid:5e3c9b20-1958-4bbe-adfd-7bd870a34447

 DOI

https://doi.org/10.1021/acs.nanolett.6b03820

 ISSN

1530-6984

 Source

Nano Letters: a journal dedicated to nanoscience and nanotechnology, 17 (2), 715-720

 Part of collection

Institutional Repository

 Document type

journal article

 Rights

© 2017 A.M. RinconVieiraLugarinhoMonteiro, D.J. Groenendijk, N. Manca, E. Mulazimoglu, S. Goswami, Y.M. Blanter, L.M.K. Vandersypen, A. Caviglia
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