Analytical model of I–V characteristics of arbitrarily shallow p-n junctions

Popadic, M.; Lorito, G.; Nanver, L.K.

doi:doi:10.1109/TED.2008.2009028

Analytical model of I–V characteristics of arbitrarily shallow p-n junctions

Title

Analytical model of I–V characteristics of arbitrarily shallow p-n junctions

Author

Popadic, M.
Lorito, G.
Nanver, L.K.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics & Computer Engineering

Date

2008-12-22

Abstract

For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping region can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultrashallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

Subject

Schottky barriers
Schottky diodes
semiconductor device modeling
semiconductor diodes
semiconductor junctions

To reference this document use:

http://resolver.tudelft.nl/uuid:5f28db46-5b7b-4444-89b0-1b84db666fa9

DOI

https://doi.org/10.1109/TED.2008.2009028

Publisher

IEEE

ISSN

0018-9383

Source

IEEE Transactions on Electron Devices, 56 (1), 2009