Print Email Facebook Twitter Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers Title Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers Author Mohammadi, V. Nihtianov, S. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2016-02-04 Abstract The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the borondepositiontemperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the borondeposition is investigated on the micro scale. A LB = 2.2 mm was determined for borondeposition at 700 °C, while a LB of less than 1 mm was observed at temperatures lower than 500 °C. Subject borondiffusionchemical vapor depositionsiliconboundary value problemsOA-Fund TU Delft To reference this document use: http://resolver.tudelft.nl/uuid:5fafb6be-0cd7-4d2b-a560-cd5e29ebccea Publisher American Institute of Physics ISSN 2158-3226 Source https://doi.org/10.1063/1.4941702 Source AIP Advances, 6 (2), 2016 Part of collection Institutional Repository Document type journal article Rights © 2016 The Author(s)CC BY - All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License Files PDF Nihtianov_2016.pdf 2.93 MB Close viewer /islandora/object/uuid:5fafb6be-0cd7-4d2b-a560-cd5e29ebccea/datastream/OBJ/view