Print Email Facebook Twitter Emission efficiency limit of Si nanocrystals Title Emission efficiency limit of Si nanocrystals Author Limpens, R. Luxembourg, S.L. Weeber, A.W. Gregorkiewicz, T. Faculty Electrical Engineering, Mathematics and Computer Science Department Electrical Sustainable Energy Date 2016-01-20 Abstract One of the important obstacles on the way to application of Si nanocrystals for development of practical devices is their typically low emissivity. In this study we explore the limits of external quantum yield of photoluminescence of solid-state dispersions of Si nanocrystals in SiO2. By making use of a low-temperature hydrogen passivation treatment we demonstrate a maximum emission quantum efficiency of approximately 35%. This is the highest value ever reported for this type of material. By cross-correlating PL lifetime with EQE values, we obtain a comprehensive understanding of the efficiency limiting processes induced by Pb-defects. We establish that the observed record efficiency corresponds to an interface density of Pb-centers of 1.3?×?1012?cm12, which is 2 orders of magnitude higher than for the best Si/SiO2 interface. This result implies that Si nanocrystals with up to 100% emission efficiency are feasible. Subject nanoparticlesquantum dotssurfaces, interfaces and thin films To reference this document use: http://resolver.tudelft.nl/uuid:604f0968-bafc-48e6-99ab-995f3ae9aa31 Publisher Nature Publishing Group ISSN 2045-2322 Source https://doi.org/10.1038/srep19566 Source Scientific Reports, 6, 2016 Part of collection Institutional Repository Document type journal article Rights (c) 2016 This work is licensed under a Creative Commons Attribution 4.0 International License - CC-BY Files PDF 329971.pdf 713.62 KB Close viewer /islandora/object/uuid:604f0968-bafc-48e6-99ab-995f3ae9aa31/datastream/OBJ/view