Print Email Facebook Twitter Temperature dependence of chemical-vapor deposition of pure boron layers from diborane Title Temperature dependence of chemical-vapor deposition of pure boron layers from diborane Author Mohammadi, V. De Boer, W.B. Nanver, L.K. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2012-09-12 Abstract Surface reaction mechanisms are investigated to determine the activation energies of pure boron (PureB) layer deposition at temperatures from 350?°C to 850?°C when using chemical-vapor deposition from diborane in a commercial Si/SiGe epitaxial reactor with either hydrogen or nitrogen as carrier gas. Three distinguishable regions are identified to be related to the dominance of specific chemical reaction mechanisms. Activation energies in H2 are found to be 28?kcal/mol below 400?°C and 6.5?kcal/mol from 400?°C to 700?°C. In N2, the value decreases to 2.1?kcal/mol for all temperatures below 700?°C. The rate of hydrogen desorption is decisive for this behavior. Subject boronchemical vapour depositiondesorptionepitaxial layershydrogensurface chemistry To reference this document use: http://resolver.tudelft.nl/uuid:6350ad5c-d3b8-4846-9fb8-2059fe6c7ae5 DOI https://doi.org/10.1063/1.4752109 Publisher American Institute of Physics ISSN 0003-6951 Source http://apl.aip.org/resource/1/applab/v101/i11/p111906_s1 Source Applied Physics Letters, 101 (11), 2012 Part of collection Institutional Repository Document type journal article Rights © 2012 American Institute of Physics Files PDF Mohammadi_2012.pdf 330.37 KB Close viewer /islandora/object/uuid:6350ad5c-d3b8-4846-9fb8-2059fe6c7ae5/datastream/OBJ/view