Print Email Facebook Twitter Opto-electrical approaches for high efficiency and ultra-thin c-Si solar cells Title Opto-electrical approaches for high efficiency and ultra-thin c-Si solar cells Author Ingenito, A. Isabella, O. Zeman, M. Faculty Electrical Engineering, Mathematics and Computer Science Department Electrical Sustainable Energy Date 2014-10-20 Abstract The need for cost reduction requires using less raw material and cost-effective processes without sacrificing the conversion efficiency. For keeping high the generated photo-current, an advanced light trapping scheme for ultra-thin silicon wafers is here proposed, exhibiting absorptances up to 99% of 4n2 classical absorption limit for wafer thinner than 35 ?m. Such excellent optical performance does not reflect optimal electronic properties due to high recombination rate of the nano-textured surface. Therefore, we propose a passivation method involving both wet etching and high quality passivation coating of the nano-textured surface. For wet etching time longer than 30 s recombination rate of the nano-textured surface reduced more than three time with respect to the un-etched one while keeping the averaged reflectance below 2% (between 300 and 1050 nm). Electrical simulations based on such findings indicate that for wafer thinner than 35 ?m conversion efficiency higher than 25% can be achieved. To reference this document use: http://resolver.tudelft.nl/uuid:66ecfa5a-68a4-4ff0-b4d1-4f4611ac3131 Publisher IEEE ISBN 978-1-4799-5474-2 Source ASDAM 2014: Proceedings of the 10th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 20-22 October 2014; Authors version Other version https://doi.org/10.1109/ASDAM.2014.6998703 Part of collection Institutional Repository Document type conference paper Rights (c) 2014 The Author(s)IEEE Files PDF 312540.pdf 725.94 KB Close viewer /islandora/object/uuid:66ecfa5a-68a4-4ff0-b4d1-4f4611ac3131/datastream/OBJ/view