Print Email Facebook Twitter Integrated SiGe Detectors for Si Photonic Sensor Platforms Title Integrated SiGe Detectors for Si Photonic Sensor Platforms Author Pandraud, G. (TU Delft EKL Processing) Milosavljevic, S. (TU Delft EKL Processing) Sammak, A. (TU Delft Business Development; TU Delft QuTech Advanced Research Centre) Cherchi, Matteo (VTT Technical Research Center of Finland) Jovic, A. (TU Delft EKL Processing) Sarro, Pasqualina M (TU Delft Electronic Components, Technology and Materials) Department Business Development Date 2017 Abstract In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like OpticalCoherence Tomography. Subject Si photonicsSiGe detectorsoptical coherence tomography To reference this document use: http://resolver.tudelft.nl/uuid:69084f50-5608-4d01-ab03-71d97b6b16f7 DOI https://doi.org/10.3390/proceedings1040559 Source Proceedings of Eurosensors 2017 Event Eurosensors 2017, 2017-09-03 → 2017-09-06, Paris, France Series Proceedings, 2504-3900, 1 (4) Part of collection Institutional Repository Document type conference paper Rights © 2017 G. Pandraud, S. Milosavljevic, A. Sammak, Matteo Cherchi, A. Jovic, Pasqualina M Sarro Files PDF proceedings_01_00559_v2_1_.pdf 1.07 MB Close viewer /islandora/object/uuid:69084f50-5608-4d01-ab03-71d97b6b16f7/datastream/OBJ/view