Print Email Facebook Twitter All-thermal transistor based on stochastic switching Title All-thermal transistor based on stochastic switching Author Sánchez, Rafael (Carlos III University of Madrid) Thierschmann, R. (TU Delft QN/Klapwijk Lab) Molenkamp, Laurens W. (University of Würzburg) Date 2017-06-01 Abstract Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of single-electron tunneling to propose a bipartite device working as a thermal transistor. Charge and heat currents in a two-terminal conductor can be gated by thermal fluctuations from a third terminal to which it is capacitively coupled. The gate system can act as a switch that injects neither charge nor energy into the conductor, hence achieving huge amplification factors. Nonthermal properties of the tunneling electrons can be exploited to operate the device with no energy consumption. To reference this document use: http://resolver.tudelft.nl/uuid:6ac6b571-ad8d-4307-984b-835fc0fb9d40 DOI https://doi.org/10.1103/PhysRevB.95.241401 ISSN 1098-0121 Source Physical Review B (Condensed Matter and Materials Physics), 95 (24) Part of collection Institutional Repository Document type journal article Rights © 2017 Rafael Sánchez, R. Thierschmann, Laurens W. Molenkamp Files PDF PhysRevB.95.241401.pdf 452.42 KB Close viewer /islandora/object/uuid:6ac6b571-ad8d-4307-984b-835fc0fb9d40/datastream/OBJ/view