Print Email Facebook Twitter Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon Title Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon Author Klaver, A. Nádady, V. Zeman, M. Swaaiij, R.A.C.M.M. Faculty Electrical Engineering, Mathematics and Computer Science Department Electrical Sustainable Energy Date 2006-07-14 Abstract We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar trend is observed for a-Si:H which has been subjected to light soaking, but in that case the majority of defect states are created around midgap, whereas with electron-beam degradation more defect states are created near the valence-band tail. Subject siliconhydrogen,elemental semiconductorsamorphous semiconductorsdeep level transient spectroscopyelectron beam effectsdefect statesconduction bandsenergy gapvalence bands To reference this document use: http://resolver.tudelft.nl/uuid:6ae01098-ac49-4dcc-9c4f-381f33f0cd96 DOI https://doi.org/10.1063/1.2221876 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v89/i2/p022119/s1 Source Applied Physics Letters, 89 (2), 2006 Part of collection Institutional Repository Document type journal article Rights (c) 2006 The Author(s); American Institute of Physics Files PDF Klaver_2006.pdf 70.22 KB Close viewer /islandora/object/uuid:6ae01098-ac49-4dcc-9c4f-381f33f0cd96/datastream/OBJ/view