Print Email Facebook Twitter Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs) Title Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs) Author Sun, Y. (TU Delft Electronic Components, Technology and Materials) Kang, Xuanwu (Chinese Academy of Sciences) Zheng, Yingkui (Chinese Academy of Sciences) Lu, Jiang (Chinese Academy of Sciences) Tian, Xiaoli (Chinese Academy of Sciences) Wei, Ke (Chinese Academy of Sciences) Wu, Hao (Chinese Academy of Sciences) Wang, Wenbo Liu, Xinyu (Chinese Academy of Sciences) Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials) Date 2019 Abstract Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly. Subject Edge termination techniquesGaNSchottky barrier diode (SBD)Vertical power devices To reference this document use: http://resolver.tudelft.nl/uuid:6db72bfd-c8a5-4cc3-a639-20768c8a0863 DOI https://doi.org/10.3390/electronics8050575 Source Electronics (Switzerland), 8 (5), 1-15 Part of collection Institutional Repository Document type review Rights © 2019 Y. Sun, Xuanwu Kang, Yingkui Zheng, Jiang Lu, Xiaoli Tian, Ke Wei, Hao Wu, Wenbo Wang, Xinyu Liu, Kouchi Zhang Files PDF electronics_08_00575_v2.pdf 4.26 MB Close viewer /islandora/object/uuid:6db72bfd-c8a5-4cc3-a639-20768c8a0863/datastream/OBJ/view