Print Email Facebook Twitter Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces Title Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces Author Lee, Joon Sue (University of California) Koelling, Sebastian (Eindhoven University of Technology) Verheijen, Marcel A. (Eindhoven University of Technology) Petkovic, Ivana (University of Copenhagen) Schaller, V. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre) Marcus, Charles M. (University of Copenhagen) Krogstrup, Peter (University of Copenhagen; Microsoft Quantum Materials Lab Copenhagen, Kongens Lyngby) Kouwenhoven, Leo P. (TU Delft QRD/Kouwenhoven Lab; TU Delft QN/Kouwenhoven Lab; Microsoft Quantum Lab Delft) Bakkers, E.P.A.M. (Eindhoven University of Technology) Date 2019 Abstract We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned SiO2-coated InP(001), InP(111)B, and InP(011) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic present in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies. To reference this document use: http://resolver.tudelft.nl/uuid:716c04a6-564a-4fdc-88b0-44fbf6a49814 DOI https://doi.org/10.1103/PhysRevMaterials.3.084606 ISSN 2475-9953 Source Physical Review Materials, 3 (8), 1-12 Part of collection Institutional Repository Document type journal article Rights © 2019 Joon Sue Lee, Sebastian Koelling, Marcel A. Verheijen, Ivana Petkovic, V. Schaller, Charles M. Marcus, Peter Krogstrup, Leo P. Kouwenhoven, E.P.A.M. Bakkers, More Authors Files PDF PhysRevMaterials.3.084606.pdf 5.11 MB Close viewer /islandora/object/uuid:716c04a6-564a-4fdc-88b0-44fbf6a49814/datastream/OBJ/view