Print Email Facebook Twitter Insights to emitter saturation current densities of boron implanted samples based on defects simulations Title Insights to emitter saturation current densities of boron implanted samples based on defects simulations Author Mok, K.R.C. Naber, R.C.G. Nanver, L.K. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2012-06-25 Abstract Emitter saturation current densities, Joe have been investigated with different boron implantation dose and annealing conditions. The higher thermal budgets used here are shown experimentally to improve Joe, implying more complete defect dissolution. Simulations show that significant degradation in Joe can be attributed to the presence of dislocation loops. In addition, in cases where dislocation loops have been annealed, high dose boron implantation still results in stable boron interstitial clusters, which contributes to Joe degradation. Subject annealingboroncurrent densitydislocation loopsdissolvingelemental semiconductorsinterstitialsion implantationsilicon To reference this document use: http://resolver.tudelft.nl/uuid:748b6d7e-0f53-43ad-b060-7a1361993bf3 DOI https://doi.org/10.1063/1.4766534 Publisher American Institute of Physics ISBN 978-0-7354-1108-1 Source http://proceedings.aip.org/resource/2/apcpcs/1496/1/245_1 Source AIP Conference Proceedings 1496, Proceedings of the 19th International Conference on Ion Implantation Technology, Valladolid, Spain, 25-29 June 2012 Part of collection Institutional Repository Document type conference paper Rights © 2012 American Institute of Physics Files PDF Mok_2012.pdf 346.56 KB Close viewer /islandora/object/uuid:748b6d7e-0f53-43ad-b060-7a1361993bf3/datastream/OBJ/view