Print Email Facebook Twitter Hydrogenated Indium Oxide (IO:H) TCO for Thin Film Solar Cell Title Hydrogenated Indium Oxide (IO:H) TCO for Thin Film Solar Cell Author Wibowo Setia Budhi, A. Contributor Isabella, O. (mentor) Illiberi, A. (mentor) Faculty Electrical Engineering, Mathematics and Computer Science Department Electrical Sustainable Energy Programme Sustainable Energy Technology Date 2016-10-31 Abstract Achieving high efficiency solar cells becomes more interesting in order to make solar cell become cost competitive to the other renewable energy sources. Transparent conductive oxide (TCO) which has a requirement to be chemically stable, high transparency and high conductivity, and also application for light trapping application makes it important to be developed. TCO that are commonly used for thin film solar cell has a similar problem, which is high absorption in the near infra-red (NIR) region. Recently, hydrogenated indium oxide (IO:H) has been developed and gained more attention due to the possibility to obtain high mobility with low absorption from visible to NIR region. Therefore the objective of this thesis is the development of high mobility IO:H TCO for thin film solar cells application. Several parameters have been adjusted in the development of IO:H such as partial pressure of water vapor, thickness, annealing temperature and power. Introduction of water vapor during the deposition suppresses the growth of In2O3 crystal and make the layer amorphous. Deposition amorphous layer is important to achieve high mobility due to the possibility of defects clustering (oxygen vacancies and indium vacancies) during the annealing. Another important role of water vapor is as the source of hydrogen atoms which could passivate the defects inside IO:H layers. IO:H with mobility of around 150 cm2/Vs and sheet resistance of 28 (thickness of 100nm) has been developed. By increasing the thickness of IO:H layer, the sheet resistance could be decreased until 12.5 at 400nm thickness with maintaining mobility of 120 cm2/Vs. Application of IO:H as TCO in thin film solar cells need to be optimized further. CIGS solar cell with IO:H on top of it indicates a lower efficiency (11.92 %) compared to CIGS with AZO (15.05 %). The loss in CIGS solar cell with IO:H on top of it mainly caused by the drop in the VOC and FF of the solar cell. Meanwhile, the a-Si solar cell with IO:H indicates a better efficiency (5.71 %) compared to cell with AZO (5.34%). It gain higher VOC and JSC but loose in FF. In general the solar cell with IO:H as TCO layer indicates lower FF and higher JSCĀ¬ compared to solar cell with AZO. Subject TCOHydrogenatedIndium Oxide To reference this document use: http://resolver.tudelft.nl/uuid:78eed80f-2d9e-4c9a-b806-40b8adb9ccda Part of collection Student theses Document type master thesis Rights (c) 2016 Wibowo Setia Budhi, A. Files PDF MSc Thesis - Ariyanto Wibowo v3.pdf 6.78 MB Close viewer /islandora/object/uuid:78eed80f-2d9e-4c9a-b806-40b8adb9ccda/datastream/OBJ/view