Print Email Facebook Twitter Electric-field dependent g -factor anisotropy in Ge-Si core-shell nanowire quantum dots Title Electric-field dependent g -factor anisotropy in Ge-Si core-shell nanowire quantum dots Author Brauns, Matthias (University of Twente) Ridderbos, Joost (University of Twente) Li, Ang (Eindhoven University of Technology) Bakkers, E.P.A.M. (TU Delft QN/Bakkers Lab; Eindhoven University of Technology) Zwanenburg, Floris A. (University of Twente) Date 2016-03-17 Abstract We present angle-dependent measurements of the effective g factor g in a Ge-Si core-shell nanowire quantum dot. g is found to be maximum when the magnetic field is pointing perpendicularly to both the nanowire and the electric field induced by local gates. Alignment of the magnetic field with the electric field reduces g significantly. g is almost completely quenched when the magnetic field is aligned with the nanowire axis. These findings confirm recent calculations, where the obtained anisotropy is attributed to a Rashba-type spin-orbit interaction induced by heavy-hole light-hole mixing. In principle, this facilitates manipulation of spin-orbit qubits by means of a continuous high-frequency electric field. To reference this document use: http://resolver.tudelft.nl/uuid:7bca67f3-73cf-4e7c-b0d6-221eeea42ba2 DOI https://doi.org/10.1103/PhysRevB.93.121408 ISSN 2469-9950 Source Physical Review B, 93 (12) Part of collection Institutional Repository Document type journal article Rights © 2016 Matthias Brauns, Joost Ridderbos, Ang Li, E.P.A.M. Bakkers, Floris A. Zwanenburg Files PDF PhysRevB.93.121408.pdf 2.4 MB Close viewer /islandora/object/uuid:7bca67f3-73cf-4e7c-b0d6-221eeea42ba2/datastream/OBJ/view