Print Email Facebook Twitter Crystallographic Silicon-Etching for Ultra-High Aspect-Ratio FinFET Title Crystallographic Silicon-Etching for Ultra-High Aspect-Ratio FinFET Author Jovanovic, V. Suligoj, T. Nanver, L.K. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2008-05-18 To reference this document use: http://resolver.tudelft.nl/uuid:826c944e-a71a-4d15-a0d9-0c97552d482a Publisher The Electrochemical Society ISSN 1091-8213 Source Meeting Abstracts - Electrochemical Society, 213th ECS Meeting, Phoenix, USA, 18-22 May 2008: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment Part of collection Institutional Repository Document type journal article Rights © 2008 The AuthorsThe Electrochemical Society Files PDF Nanver.pdf 259.05 KB Close viewer /islandora/object/uuid:826c944e-a71a-4d15-a0d9-0c97552d482a/datastream/OBJ/view