Print Email Facebook Twitter AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications Title AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications Author Sokolovskij, R. (TU Delft Electronic Components, Technology and Materials) Contributor Zhang, Kouchi (promotor) Degree granting institution Delft University of Technology Date 2019-12-10 Abstract The rapid development and market growth of microelectronics technology continues to provide expanding connectivity, productivity, entertainment and well-being to billions of users globally. Moreover, continuous demand for more on-chip functionally presents an exciting opportunity for integration of various chemical sensors for monitoring pollution of our surrounding environment and exposure to toxic, corrosive or flammable gases. Subject AlGaN/GaNHEMTgas sensorgate recess2DEGH2SH2 To reference this document use: http://resolver.tudelft.nl/uuid:856522dc-528d-4ac6-95f7-d44fb8791ddc ISBN 978-94-028-1851-2 Embargo date 2020-06-01 Part of collection Institutional Repository Document type doctoral thesis Rights © 2019 R. Sokolovskij Files PDF Sokolovskij_GaN_sens_diss ... ion_V2.pdf 22.3 MB Close viewer /islandora/object/uuid:856522dc-528d-4ac6-95f7-d44fb8791ddc/datastream/OBJ/view