Print Email Facebook Twitter Passivation characterisation of poly-Si based passivating contacts Title Passivation characterisation of poly-Si based passivating contacts: Investigating the benefits of pinhole-enhanced passivation and a new method to extract metal-induced recombination Author Gram, Remon (TU Delft Electrical Engineering, Mathematics and Computer Science) Contributor Isabella, O. (mentor) Yang, G. (mentor) Degree granting institution Delft University of Technology Programme Electrical Engineering | Sustainable Energy Technology Date 2021-11-19 Abstract To meet the rapidly increasing global demand for energy, the potential of solar energy is being exploited towards its maximum capacity. The invention of poly-Si based passivating contacts has created an opportunity for c-Si solar cells to reach conversion efficiencies above 25%, while keeping the processing sequence relatively simple. Based on ultra-thin SiO푥 and highly doped poly-Si, this contact structure combines chemical passivation with field-effect passivation to enhance the c-Si surface passivation. Ever since 2016, the carrier transport mechanism through pinholes in the SiO푥 has been investigated, showing that the pinholes can aid in achieving a low contact resistivity (휌푐) while maintaining a low recombination (퐽0). In this work, the presence of pinholes and their impact on the passivation quality in poly-Si passivating contacts is investigated. Additionally, a method is explored to extract the metal-induced recombination (퐽0,푚푒푡푎푙), without the need for fabricating a solar cell structure... To reference this document use: http://resolver.tudelft.nl/uuid:861bd09b-70ce-48e8-80c9-6c2d87b79be3 Embargo date 2022-11-21 Part of collection Student theses Document type master thesis Rights © 2021 Remon Gram Files PDF Msc_Thesis_Report_Remon_G ... 354915.pdf 14 MB Close viewer /islandora/object/uuid:861bd09b-70ce-48e8-80c9-6c2d87b79be3/datastream/OBJ/view