Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

Stassen, A.F.
De Boer, R.W.I.
Iosad, N.N.
Morpurgo, A.F.

Applied Sciences

Kavli Institute of Nanoscience

2004-10-25

We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved reproducibility permits one to observe that the mobility of the charge carriers systematically decreases with increasing the dielectric constant of the gate insulator, the decrease being proportional to ??1. This finding demonstrates that the mobility of carriers in organic single-crystal field-effect transistors is an intrinsic property of the crystal/dielectric interface and that it does not only depend on the specific molecule used.

alumina
silicon compounds
organic semiconductors
dielectric materials
field effect transistors
permittivity
hole mobility
semiconductor-insulator boundaries

http://resolver.tudelft.nl/uuid:868f9c8e-b994-47e8-b2fd-69cca21b1415

https://doi.org/10.1063/1.1812368

American Institute of Physics

0003-6951

http://link.aip.org/link/APPLAB/v85/i17/p3899/s1

Applied Physics Letters, 85 (17), 2004

Institutional Repository

journal article

(c) 2004 The Author(s); American Institute of Physics