Print Email Facebook Twitter Compensation for Process and Temperature Dependency in a CMOS Image Sensor Title Compensation for Process and Temperature Dependency in a CMOS Image Sensor Author Xie, S. (TU Delft Electronic Instrumentation) Theuwissen, A.J.P.A.M. (TU Delft Electronic Instrumentation; Harvest Imaging) Date 2019 Abstract This paper analyzes and compensates for process and temperature dependency among a (Complementary Metal Oxide Semiconductor) CMOS image sensor (CIS) array. Both the analysis and compensation are supported with experimental results on the CIS’s dark current, dark signal non-uniformity (DSNU), and conversion gain (CG). To model and to compensate for process variations, process sensors based on pixel source follower (SF)’s transconductance g m,SF have been proposed to model and to be compared against the measurement results of SF gain A SF . In addition, A SF ’s thermal dependency has been analyzed in detail. To provide thermal information required for temperature compensation, six scattered bipolar junction transistor (BJT)-based temperature sensors replace six image pixels inside the array. They are measured to have an untrimmed inaccuracy within ±0.5 ⁰C. Dark signal and CG’s thermal dependencies are compensated using the on-chip temperature sensors by at least 79% and 87%, respectively. Subject CMOS image sensor (CIS)Conversion gain (CG)Dark currentDark signal non-uniformity (DSNU)Delta-sigma (Δ-σ) modulatorProcess variabilityProcess variationsTemperature sensorsThermal compensation To reference this document use: http://resolver.tudelft.nl/uuid:87d36c7d-1a94-44d7-8703-bb1868176df6 DOI https://doi.org/10.3390/s19040870 ISSN 1424-8220 Source Sensors, 19 (4), 1-15 Part of collection Institutional Repository Document type journal article Rights © 2019 S. Xie, A.J.P.A.M. Theuwissen Files PDF sensors_19_00870_v2.pdf 3.56 MB Close viewer /islandora/object/uuid:87d36c7d-1a94-44d7-8703-bb1868176df6/datastream/OBJ/view