Reliability study of the Floating Gate Based Embedded Non?Volatile Memory (eNVM)

Title

Reliability study of the Floating Gate Based Embedded Non?Volatile Memory (eNVM)

 Author

Yang, J.

Contributor

Nanver, L. (mentor)
Tao, G. (mentor)

Faculty

Electrical Engineering, Mathematics and Computer Science

 Department

Microelectronics & Computer Engineering

 Date

2010-04-01

 Abstract

The task of this project is to investigate the reliability aspects of NXP 2T?FNFN?NOR embedded non?volatile memories (eNVM). The structure of the memory cell is presented and its principle of operations is described. The reliability aspects (mainly endurance & retention) of the floating gate memory cell are inspected. Methods are presented to extract important parameters related to this eNVM. A new influence (charge transport in the nitride) on VT instability is addressed.

 Subject

floating gate

 To reference this document use:

http://resolver.tudelft.nl/uuid:8cd415c3-1ca3-4974-982f-40b5508bd8e1

 Embargo date

2010-04-10

 Part of collection

Student theses

 Document type

master thesis

 Rights

(c) 2010 Yang, J.
Files
PDF Final_thesis_external.pdf 1.23 MB
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