Print Email Facebook Twitter Deposition Mechanism of Aluminum Oxide on Quantum Dot Films at Atmospheric Pressure and Room Temperature Title Deposition Mechanism of Aluminum Oxide on Quantum Dot Films at Atmospheric Pressure and Room Temperature Author Valdesueiro Gonzalez, D. (TU Delft ChemE/Product and Process Engineering) Prabhu, M.K. (TU Delft ChemE/Product and Process Engineering) Guerra Nunez, C.R. (TU Delft ChemE/Product and Process Engineering; Swiss Federal Laboratories for Materials Science and Technology (Empa)) Sandeep, C. S Suchand (University of Potsdam) Kinge, S.S. (TU Delft ChemE/Opto-electronic Materials) Siebbeles, L.D.A. (TU Delft ChemE/Opto-electronic Materials) de Smet, L.C.P.M. (TU Delft OLD ChemE/Organic Materials and Interfaces) Meesters, G.M.H. (TU Delft ChemE/Product and Process Engineering) Kreutzer, M.T. (TU Delft ChemE/Chemical Engineering) Houtepen, A.J. (TU Delft ChemE/Opto-electronic Materials) van Ommen, J.R. (TU Delft ChemE/Product and Process Engineering) Department ChemE/Chemical Engineering Date 2016-03-03 Abstract Stability of quantum dot (QD) films is an issue of concern for applications in devices such as solar cells, LEDs, and transistors. This paper analyzes and optimizes the passivation of such QD films using gas-phase deposition, resulting in enhanced stability. Crucially, we deposited alumina at economically attractive conditions, room temperature and atmospheric pressure, on (1,2-ethanediamine) capped PbSe QD films using an approach based on atomic layer deposition (ALD), with trimethylaluminum (TMA) and water as precursors. We performed coating experiments from 1 to 25 cycles on the QD films, finding that alumina formed from the first exposure of TMA. X-ray photoelectron spectroscopy points to the presence of oxygen-rich compounds on the bare QD films, most likely from entrapped solvent molecules during the assembly of the QD films. These oxygenated compounds and the amine groups of the organic ligands react with TMA in the first cycle, resulting in a fast growth of alumina. Using 10 cycles resulted in a QD film that was optically stable for at least 27 days. Depositing alumina at ambient conditions is preferred, since the production of the QD films is also carried out at room temperature and atmospheric pressure, allowing combination of both processes in a single go. To reference this document use: http://resolver.tudelft.nl/uuid:96a05294-960e-412e-beb7-5f57ed77ef92 DOI https://doi.org/10.1021/acs.jpcc.5b11653 ISSN 1932-7447 Source The Journal of Physical Chemistry C, 120 (8), 4266-4275 Part of collection Institutional Repository Document type journal article Rights © 2016 D. Valdesueiro Gonzalez, M.K. Prabhu, C.R. Guerra Nunez, C. S Suchand Sandeep, S.S. Kinge, L.D.A. Siebbeles, L.C.P.M. de Smet, G.M.H. Meesters, M.T. Kreutzer, A.J. Houtepen, J.R. van Ommen Files DOCX post_print_Valdesueiro_20 ... ot....docx 2 MB Close viewer /islandora/object/uuid:96a05294-960e-412e-beb7-5f57ed77ef92/datastream/OBJ/view