Print Email Facebook Twitter Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells Title Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells Author Yang, G. (TU Delft Photovoltaic Materials and Devices) Ingenito, A. (TU Delft Photovoltaic Materials and Devices) van Hameren, Nienke (Student TU Delft) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Zeman, M. (TU Delft Electrical Sustainable Energy; TU Delft Photovoltaic Materials and Devices) Department Electrical Sustainable Energy Date 2016-01 Abstract Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySi was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (Rsh n-type = 95 Ω/□ and Rsh p-type = 120 Ω/□). An efficiency of 19.2% (Voc = 673 mV, Jsc = 38.0 mA/cm2, FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a VOC of 696 mV was also measured. To reference this document use: http://resolver.tudelft.nl/uuid:96ea4b6c-5ae9-4148-b10d-339a9e418253 DOI https://doi.org/10.1063/1.4940364 ISSN 0003-6951 Source Applied Physics Letters, 108 (3), 033903-1-033903-4 Part of collection Institutional Repository Document type journal article Rights © 2016 G. Yang, A. Ingenito, Nienke van Hameren, O. Isabella, M. Zeman Files PDF 1_2E4940364.pdf 1.19 MB Close viewer /islandora/object/uuid:96ea4b6c-5ae9-4148-b10d-339a9e418253/datastream/OBJ/view