Print Email Facebook Twitter Thin-film amorphous silicon germanium solar cells with p-and n-type hydrogenated silicon oxide layers Title Thin-film amorphous silicon germanium solar cells with p-and n-type hydrogenated silicon oxide layers Author Si, F.T. (TU Delft Photovoltaic Materials and Devices) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Zeman, M. (TU Delft Electrical Sustainable Energy) Department Electrical Sustainable Energy Date 2017 Abstract Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric field. Bandgap grading of n-SiOx:H is designed to obtain a smooth transition of the energy band edge from the intrinsic to n-doped layer, without the need of an amorphous buffer layer. With the optimized optical and electrical structure, a high conversion efficiency of 9.41% has been achieved. Having eliminated other doped materials without sacrificing performance, the sole use of SiOx:H in the doped layers of a-SiGe:H cells opens up great flexibility in the design of high-efficiency multi-junction thin-film silicon-based solar cells. Subject Hydrogenated amorphous silicon germaniumHydrogenated silicon oxideLight managementParasitic losses To reference this document use: http://resolver.tudelft.nl/uuid:9806e6e3-6c62-4782-947a-c1caa8791ab4 DOI https://doi.org/10.1016/j.solmat.2017.01.001 ISSN 0927-0248 Source Solar Energy Materials & Solar Cells, 163, 9-14 Part of collection Institutional Repository Document type journal article Rights © 2017 F.T. Si, O. Isabella, M. Zeman Files PDF 11638770.pdf 680.02 KB Close viewer /islandora/object/uuid:9806e6e3-6c62-4782-947a-c1caa8791ab4/datastream/OBJ/view